Reply to comment by D R Bowler et al, Bi nanolines on Si(001): registry with the substrate

نویسندگان

  • R. H. Miwa
  • J. M. MacLeod
  • A. B. McLean
  • G. P. Srivastava
چکیده

The registry of bismuth dimers, integral components of the bismuth nanoline on Si(001), is examined. In contrast to the currently accepted view, the bismuth dimers are found to be in registry with the two-dimensional lattice created by the silicon dimers. The consequences of this finding are briefly explored.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Interaction between electronic structure and strain in Bi nanolines on Si ( 001 )

Heteroepitaxial strain can be a controlling factor in the lateral dimensions of 1-D nanostructures. Bi nanolines on Si(001) have an atomic structure which involves a large sub-surface reconstruction, resulting in a strong elastic coupling to the surrounding silicon. We present variable-bias STM and first principles electronic structure calculations of the Bi nanolines, which investigates this i...

متن کامل

One-dimensional Si-in-Si(001) template for single-atom wire growth

Single atom metallic wires of arbitrary length are of immense technological and scientific interest. We present atomic-resolution scanning tunneling microscope data of a silicon-only template, which modeling predicts to enable the self-organized growth of isolated micrometer long surface and subsurface single-atom chains. It consists of a one-dimensional, defect-free Si reconstruction four dime...

متن کامل

Stress relief as the driving force for self-assembled bi nanolines.

Bi nanolines self-assemble on Si(001) and are remarkable for their straightness and length-they are often more than 400 nm long, and a kink in a nanoline has never been observed. Through electronic structure calculations, we have found an energetically favorable structure for these nanolines that agrees with our scanning tunneling microscopy and photoemission experiments; the structure has an e...

متن کامل

Half-filled orbital and unconventional geometry of a common dopant in Si(001)

The determining factor of the bulk properties of doped Si is the column rather than the row in the periodic table from which the dopants are drawn. It is unknown whether the basic properties of dopants at surfaces and interfaces, steadily growing in importance as microelectronic devices shrink, are also solely governed by their column of origin. The common light impurity P replaces individual S...

متن کامل

Environmental gamma radiation: a comment (Letter to the Editor)

Editor, I read the recent publication by Toossi et al. with a great interest (1). Toossi et al. concluded that “Average gonad and bone marrow doses for North Khorasan, Boshehr and Hormozgan provinces were less than the corresponding values for normal area (2).” There are some facts on this report to be concerned. I agree that the detected levels might be high in the mentioned area, but th...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2006